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GE17045EEA3

GE17045EEA3 GE Aerospace

1700v-450A-3PH-half-bridge-silicon-carbide-power-module-GE17045EEA3.pdf
Hersteller: GE Aerospace
Description: 1700V 425A SiC Six-Pack Module
Part Status: Active
Vgs(th) (Max) @ Id: 4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Power - Max: 1250W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -55°C ~ 150°C (Tc)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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Technische Details GE17045EEA3 GE Aerospace

Description: 1700V 425A SiC Six-Pack Module, Part Status: Active, Vgs(th) (Max) @ Id: 4.5V @ 160mA, Gate Charge (Qg) (Max) @ Vgs: 1207nC @ 18V, Rds On (Max) @ Id, Vgs: 4.45mOhm @ 425A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 29100pF @ 900V, Current - Continuous Drain (Id) @ 25°C: 425A (Tc), Drain to Source Voltage (Vdss): 1700V (1.7kV), Power - Max: 1250W (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -55°C ~ 150°C (Tc), Configuration: 6 N-Channel (3-Phase Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.