Produkte > SEMIQ > GHXS030A060S-D3
GHXS030A060S-D3

GHXS030A060S-D3 SemiQ


GHXS030A060S_D3-1916863.pdf Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Parallel Power Module 600V 30A
auf Bestellung 28 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+44.11 EUR
10+ 39.18 EUR
20+ 36.57 EUR
50+ 35.43 EUR
100+ 34.27 EUR
200+ 32 EUR
500+ 29.43 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details GHXS030A060S-D3 SemiQ

Description: DIODE MOD SIC SCHOT 600V SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 30A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A, Current - Reverse Leakage @ Vr: 100 µA @ 600 V.

Weitere Produktangebote GHXS030A060S-D3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
GHXS030A060S-D3 GHXS030A060S-D3 Hersteller : SemiQ GHXS030A060S-D3.pdf Description: DIODE MOD SIC SCHOT 600V SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar