GHXS030A120S-D1E SemiQ
Hersteller: SemiQ
Description: BRIDGE RECT 1P 1.2KV 30A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide Schottky
Supplier Device Package: SOT-227
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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Technische Details GHXS030A120S-D1E SemiQ
Description: BRIDGE RECT 1P 1.2KV 30A SOT-227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Diode Type: Single Phase, Operating Temperature: -55°C ~ 175°C (TJ), Technology: Silicon Carbide Schottky, Supplier Device Package: SOT-227, Part Status: Active, Voltage - Peak Reverse (Max): 1.2 kV, Current - Average Rectified (Io): 30 A, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote GHXS030A120S-D1E nach Preis ab 184.83 EUR bis 210.24 EUR
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GHXS030A120S-D1E | SemiQ |
Discrete Semiconductor Modules SiC SBD Rectifier Bridge Power Module 1200V 30A |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| GHXS030A120S-D1E |
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Hersteller: SemiQ
Discrete Semiconductor Modules SiC SBD Rectifier Bridge Power Module 1200V 30A
Discrete Semiconductor Modules SiC SBD Rectifier Bridge Power Module 1200V 30A
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 210.24 EUR |
| 10+ | 199.36 EUR |
| 30+ | 196.37 EUR |
| 100+ | 188.39 EUR |
| 250+ | 184.83 EUR |