GHXS030A120S-D3 SemiQ
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 112.27 EUR |
| 10+ | 105.46 EUR |
| 30+ | 103.56 EUR |
| 100+ | 94.49 EUR |
| 250+ | 92.72 EUR |
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Technische Details GHXS030A120S-D3 SemiQ
Description: DIODE SCHOTKY 1200V 30A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 30A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote GHXS030A120S-D3 nach Preis ab 112.2 EUR bis 119.43 EUR
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GHXS030A120S-D3 | Hersteller : SemiQ |
 Description: DIODE SCHOTKY 1200V 30A SOT227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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