GHXS050B170S-D3 SemiQ
Hersteller: SemiQ
Description: 1700V, 50A SIC DUAL DIODE MODULE
Current - Reverse Leakage @ Vr: 200 µA @ 1.7 kV
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 110A
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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Technische Details GHXS050B170S-D3 SemiQ
Description: 1700V, 50A SIC DUAL DIODE MODULE, Current - Reverse Leakage @ Vr: 200 µA @ 1.7 kV, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 50 A, Voltage - DC Reverse (Vr) (Max): 1700 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 110A, Diode Configuration: 2 Independent, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Weitere Produktangebote GHXS050B170S-D3 nach Preis ab 50.23 EUR bis 66.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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GHXS050B170S-D3 | SemiQ |
Diode Modules SiC 1700V 50A Schottky Diode Module |
auf Bestellung 23 Stücke: Lieferzeit 10-14 Tag (e) |
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| GHXS050B170S-D3 |
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Hersteller: SemiQ
Diode Modules SiC 1700V 50A Schottky Diode Module
Diode Modules SiC 1700V 50A Schottky Diode Module
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 66.7 EUR |
| 10+ | 56.69 EUR |
| 100+ | 50.23 EUR |