GHXS100B065S-D3 SemiQ
Hersteller: SemiQDescription: DIODE MOD SIC 650V 193A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 193A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 100 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 47.94 EUR |
| 10+ | 35.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GHXS100B065S-D3 SemiQ
Description: DIODE MOD SIC 650V 193A SOT-227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 193A (DC), Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 100 A, Current - Reverse Leakage @ Vr: 250 µA @ 650 V.
Weitere Produktangebote GHXS100B065S-D3 nach Preis ab 34.37 EUR bis 52.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
GHXS100B065S-D3 | Hersteller : SemiQ |
Diode Modules SiC SBD 650V 100A SiC Power Modules |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
|