GHXS100B065S-D3 SemiQ
Hersteller: SemiQ
Description: DIODE MOD SIC 650V 193A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 193A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 100 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 71.86 EUR |
| 10+ | 53.38 EUR |
| 50+ | 45.52 EUR |
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Technische Details GHXS100B065S-D3 SemiQ
Description: DIODE MOD SIC 650V 193A SOT-227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 193A (DC), Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 100 A, Current - Reverse Leakage @ Vr: 250 µA @ 650 V.
Weitere Produktangebote GHXS100B065S-D3 nach Preis ab 46.18 EUR bis 72.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
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GHXS100B065S-D3 | SemiQ |
Diode Modules SiC SBD 650V 100A SiC Power Modules |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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| GHXS100B065S-D3 |
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Hersteller: SemiQ
Diode Modules SiC SBD 650V 100A SiC Power Modules
Diode Modules SiC SBD 650V 100A SiC Power Modules
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 72.2 EUR |
| 10+ | 46.18 EUR |