auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 47.08 EUR |
| 10+ | 34.58 EUR |
| 100+ | 31.12 EUR |
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Technische Details GHXS100B065S-D3 SemiQ
Description: DIODE MOD SIC 650V 193A SOT-227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 193A (DC), Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 100 A, Current - Reverse Leakage @ Vr: 250 µA @ 650 V.
Weitere Produktangebote GHXS100B065S-D3 nach Preis ab 35.24 EUR bis 47.94 EUR
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GHXS100B065S-D3 | Hersteller : SemiQ |
 Description: DIODE MOD SIC 650V 193A SOT-227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 193A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 100 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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