GHXS100B120S-D3 SemiQ
Hersteller: SemiQDescription: DIODE MOD SIC 1200V 198A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 198A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 69.77 EUR |
| 10+ | 52.44 EUR |
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Technische Details GHXS100B120S-D3 SemiQ
Description: DIODE MOD SIC 1200V 198A SOT-227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 198A (DC), Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote GHXS100B120S-D3 nach Preis ab 92.65 EUR bis 116.88 EUR
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GHXS100B120S-D3 | Hersteller : SemiQ |
Discrete Semiconductor Modules SiC SBD 1200V 100A SiC Power Modules |
auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
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