GHXS100B120S-D3 SemiQ
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 116.88 EUR |
| 10+ | 105.92 EUR |
| 20+ | 104.05 EUR |
| 50+ | 102.17 EUR |
| 100+ | 94.97 EUR |
| 200+ | 93.46 EUR |
| 500+ | 92.65 EUR |
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Technische Details GHXS100B120S-D3 SemiQ
Description: DIODE MOD SIC 1200V 198A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 198A (DC), Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote GHXS100B120S-D3 nach Preis ab 105 EUR bis 129.22 EUR
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GHXS100B120S-D3 | Hersteller : SemiQ |
Description: DIODE MOD SIC 1200V 198A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 198A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
auf Bestellung 121 Stücke: Lieferzeit 10-14 Tag (e) |
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