GKI07301 Sanken Electric USA Inc.
Hersteller: Sanken Electric USA Inc.
Description: MOSFET N-CH 75V 6A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 23.2mOhm @ 12.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
| Anzahl | Preis |
|---|---|
| 7+ | 2.66 EUR |
| 11+ | 1.69 EUR |
| 100+ | 1.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GKI07301 Sanken Electric USA Inc.
Description: MOSFET N-CH 75V 6A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 2.5V @ 350µA, Power Dissipation (Max): 3.1W (Ta), 46W (Tc), Rds On (Max) @ Id, Vgs: 23.2mOhm @ 12.4A, 10V, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Current - Continuous Drain (Id) @ 25°C: 6A (Ta), FET Type: N-Channel.
Weitere Produktangebote GKI07301
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
GKI07301 | Sanken Electric USA Inc. |
Description: MOSFET N-CH 75V 6A 8DFNInput Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 350µA Power Dissipation (Max): 3.1W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 23.2mOhm @ 12.4A, 10V Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 6A (Ta) FET Type: N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GKI07301 |
![]() |
Hersteller: Sanken Electric USA Inc.
Description: MOSFET N-CH 75V 6A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 23.2mOhm @ 12.4A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Description: MOSFET N-CH 75V 6A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 350µA
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 23.2mOhm @ 12.4A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
