GL34AHE3/98 Vishay General Semiconductor
auf Bestellung 4186 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 44+ | 1.21 EUR |
| 55+ | 0.95 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.53 EUR |
| 1000+ | 0.37 EUR |
| 2500+ | 0.31 EUR |
| 10000+ | 0.28 EUR |
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Technische Details GL34AHE3/98 Vishay General Semiconductor
Description: DIODE GEN PURP 50V 500MA DO213AA, Packaging: Tape & Reel (TR), Package / Case: DO-213AA (Glass), Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Capacitance @ Vr, F: 4pF @ 4V, 1MHz, Current - Average Rectified (Io): 500mA, Supplier Device Package: DO-213AA (GL34), Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA, Current - Reverse Leakage @ Vr: 5 µA @ 50 V.
Weitere Produktangebote GL34AHE3/98
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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GL34AHE3/98 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 50V 500MA DO213AAPackaging: Tape & Reel (TR) Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
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