| Anzahl | Privatkunde |
|---|---|
| 1+ | 19.23 EUR |
| 10+ | 13.23 EUR |
| 100+ | 9.62 EUR |
| 500+ | 8.59 EUR |
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Technische Details GNP1070TC-ZE2 ROHM Semiconductor
Description: ECOGAN, 650V 20A DFN8080K, E-MOD, Packaging: Tape & Reel (TR), Package / Case: 8-PowerDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 1.9A, 5.5V, Power Dissipation (Max): 56W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 18mA, Supplier Device Package: DFN8080K, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V, Vgs (Max): +6V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V.
Weitere Produktangebote GNP1070TC-ZE2 nach Preis ab 9.83 EUR bis 31.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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GNP1070TC-ZE2 | Rohm Semiconductor |
 Description: ECOGAN, 650V 20A DFN8080K, E-MODPackaging: Cut Tape (CT) Package / Case: 8-PowerDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 1.9A, 5.5V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 18mA Supplier Device Package: DFN8080K Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V Vgs (Max): +6V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V |
auf Bestellung 747 Stücke: Lieferzeit 10-14 Tag (e) |
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GNP1070TC-ZE2 | ROHM |
Description: ROHM - GNP1070TC-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 20 A, 0.07 ohm, 5.2 nC, DFN8080K, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 5.2nC SVHC: To Be Advised Bauform - Transistor: DFN8080K Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.07ohm |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
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GNP1070TC-ZE2 | ROHM |
Description: ROHM - GNP1070TC-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 20 A, 0.07 ohm, 5.2 nC, DFN8080K, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Ladung, typ.: 5.2nC SVHC: To Be Advised Bauform - Transistor: DFN8080K Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.07ohm |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
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| GNP1070TC-ZE2 | Rohm Semiconductor |
Trans JFET N-CH 650V 20A GaN 8-Pin DFN-K EP T/R |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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| GNP1070TC-ZE2 | Rohm Semiconductor |
Trans JFET N-CH 650V 20A GaN 8-Pin DFN-K EP T/R |
auf Bestellung 168 Stücke: Lieferzeit 14-21 Tag (e) |
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| GNP1070TC-ZE2 |
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Hersteller: Rohm Semiconductor
Description: ECOGAN, 650V 20A DFN8080K, E-MOD
Packaging: Cut Tape (CT)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 1.9A, 5.5V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 18mA
Supplier Device Package: DFN8080K
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V
Vgs (Max): +6V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V
Description: ECOGAN, 650V 20A DFN8080K, E-MOD
Packaging: Cut Tape (CT)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 1.9A, 5.5V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 18mA
Supplier Device Package: DFN8080K
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V
Vgs (Max): +6V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V
auf Bestellung 747 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.72 EUR |
| 10+ | 14.53 EUR |
| 100+ | 10.92 EUR |
| 500+ | 10.66 EUR |
| GNP1070TC-ZE2 |
|
Hersteller: ROHM
Description: ROHM - GNP1070TC-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 20 A, 0.07 ohm, 5.2 nC, DFN8080K, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 5.2nC
SVHC: To Be Advised
Bauform - Transistor: DFN8080K
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.07ohm
Description: ROHM - GNP1070TC-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 20 A, 0.07 ohm, 5.2 nC, DFN8080K, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 5.2nC
SVHC: To Be Advised
Bauform - Transistor: DFN8080K
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.07ohm
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 22.97 EUR |
| 13+ | 18 EUR |
| 16+ | 13.54 EUR |
| 50+ | 11.7 EUR |
| 100+ | 9.83 EUR |
| GNP1070TC-ZE2 |
|
Hersteller: ROHM
Description: ROHM - GNP1070TC-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 20 A, 0.07 ohm, 5.2 nC, DFN8080K, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Ladung, typ.: 5.2nC
SVHC: To Be Advised
Bauform - Transistor: DFN8080K
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.07ohm
Description: ROHM - GNP1070TC-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 20 A, 0.07 ohm, 5.2 nC, DFN8080K, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Ladung, typ.: 5.2nC
SVHC: To Be Advised
Bauform - Transistor: DFN8080K
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.07ohm
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 22.97 EUR |
| 13+ | 18 EUR |
| 16+ | 13.54 EUR |
| 50+ | 11.7 EUR |
| 100+ | 9.83 EUR |
| GNP1070TC-ZE2 |
|
Hersteller: Rohm Semiconductor
Trans JFET N-CH 650V 20A GaN 8-Pin DFN-K EP T/R
Trans JFET N-CH 650V 20A GaN 8-Pin DFN-K EP T/R
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 25.88 EUR |
| 25+ | 24.34 EUR |
| GNP1070TC-ZE2 |
|
Hersteller: Rohm Semiconductor
Trans JFET N-CH 650V 20A GaN 8-Pin DFN-K EP T/R
Trans JFET N-CH 650V 20A GaN 8-Pin DFN-K EP T/R
auf Bestellung 168 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 31.99 EUR |
| 10+ | 23.48 EUR |
| 50+ | 20.28 EUR |
| 100+ | 18.16 EUR |