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GNP1150TCA-ZE2

GNP1150TCA-ZE2 ROHM Semiconductor


gnp1150tca-z-e.pdf Hersteller: ROHM Semiconductor
GaN FETs DFN8X8 650V 11A GAN
auf Bestellung 7292 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.63 EUR
10+6.6 EUR
25+6.32 EUR
100+4.63 EUR
500+4.14 EUR
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Technische Details GNP1150TCA-ZE2 ROHM Semiconductor

Description: ECOGAN, 650V 11A DFN8080AK, E-MO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 195mOhm @ 1.9A, 5.5V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 18mA, Supplier Device Package: DFN8080AK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V, Vgs (Max): +6V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 400 V.

Weitere Produktangebote GNP1150TCA-ZE2 nach Preis ab 4.28 EUR bis 10.23 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
GNP1150TCA-ZE2 GNP1150TCA-ZE2 Hersteller : Rohm Semiconductor gnp1150tca-z-e.pdf Description: ECOGAN, 650V 11A DFN8080AK, E-MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1.9A, 5.5V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 18mA
Supplier Device Package: DFN8080AK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V
Vgs (Max): +6V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 400 V
auf Bestellung 2795 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.23 EUR
10+6.85 EUR
100+4.94 EUR
500+4.28 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
GNP1150TCA-ZE2 GNP1150TCA-ZE2 Hersteller : ROHM gnp1150tca-z-e.pdf Description: ROHM - GNP1150TCA-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.15 ohm, 2.7 nC, DFN8080AK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 11A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 2.7nC
Bauform - Transistor: DFN8080AK
Anzahl der Pins: 8Pin(s)
Produktpalette: EcoGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.15ohm
SVHC: To Be Advised
auf Bestellung 3510 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
GNP1150TCA-ZE2 GNP1150TCA-ZE2 Hersteller : ROHM gnp1150tca-z-e.pdf Description: ROHM - GNP1150TCA-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.15 ohm, 2.7 nC, DFN8080AK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 650V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 11A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 2.7nC
Bauform - Transistor: DFN8080AK
Anzahl der Pins: 8Pin(s)
Produktpalette: EcoGaN Series
productTraceability: No
Drain-Source-Durchgangswiderstand: 0.15ohm
SVHC: To Be Advised
auf Bestellung 3510 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
GNP1150TCA-ZE2 GNP1150TCA-ZE2 Hersteller : Rohm Semiconductor gnp1150tca-z-e.pdf Description: ECOGAN, 650V 11A DFN8080AK, E-MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1.9A, 5.5V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 18mA
Supplier Device Package: DFN8080AK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V
Vgs (Max): +6V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 400 V
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Im Einkaufswagen  Stück im Wert von  UAH