GNP1150TCA-ZE2 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: ECOGAN, 650V 11A DFN8080AK, E-MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1.9A, 5.5V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 18mA
Supplier Device Package: DFN8080AK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V
Vgs (Max): +6V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 400 V
auf Bestellung 3048 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 12.85 EUR |
| 10+ | 11.01 EUR |
| 100+ | 9.18 EUR |
| 500+ | 8.1 EUR |
| 1000+ | 7.29 EUR |
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Technische Details GNP1150TCA-ZE2 Rohm Semiconductor
Description: ECOGAN, 650V 11A DFN8080AK, E-MO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 195mOhm @ 1.9A, 5.5V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 18mA, Supplier Device Package: DFN8080AK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V, Vgs (Max): +6V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 400 V.
Weitere Produktangebote GNP1150TCA-ZE2 nach Preis ab 16.07 EUR bis 19.14 EUR
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GNP1150TCA-ZE2 | Hersteller : ROHM Semiconductor |
MOSFET NCH 650V 11A ESD |
auf Bestellung 7750 Stücke: Lieferzeit 14-28 Tag (e) |
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GNP1150TCA-ZE2 | Hersteller : ROHM |
Description: ROHM - GNP1150TCA-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.15 ohm, 2.7 nC, DFN8080AK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 2.7nC Bauform - Transistor: DFN8080AK Anzahl der Pins: 8Pin(s) Produktpalette: EcoGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.15ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
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GNP1150TCA-ZE2 | Hersteller : ROHM |
Description: ROHM - GNP1150TCA-ZE2 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.15 ohm, 2.7 nC, DFN8080AK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 2.7nC Bauform - Transistor: DFN8080AK Anzahl der Pins: 8Pin(s) Produktpalette: EcoGaN Series productTraceability: No Drain-Source-Durchgangswiderstand: 0.15ohm SVHC: Boric acid (14-Jun-2023) |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
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GNP1150TCA-ZE2 | Hersteller : Rohm Semiconductor |
Description: ECOGAN, 650V 11A DFN8080AK, E-MO Packaging: Tape & Reel (TR) Package / Case: 8-PowerDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 1.9A, 5.5V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 18mA Supplier Device Package: DFN8080AK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V Vgs (Max): +6V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 400 V |
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