| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.43 EUR |
| 10+ | 18.27 EUR |
| 100+ | 16.15 EUR |
| 500+ | 16.12 EUR |
Produktrezensionen
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Technische Details GNP2070TD-ZTR ROHM Semiconductor
Description: ECOGAN?, 650V 27A TOLL-8N, E-MOD, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 8A, 6V, Power Dissipation (Max): 159W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 18mA, Supplier Device Package: TOLL-8N, Drive Voltage (Max Rds On, Min Rds On): 5V, 6V, Vgs (Max): +6.5V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V.
Weitere Produktangebote GNP2070TD-ZTR nach Preis ab 13.41 EUR bis 26.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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GNP2070TD-ZTR | Rohm Semiconductor |
 Description: ECOGAN?, 650V 27A TOLL-8N, E-MODPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 8A, 6V Power Dissipation (Max): 159W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 18mA Supplier Device Package: TOLL-8N Drive Voltage (Max Rds On, Min Rds On): 5V, 6V Vgs (Max): +6.5V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V |
auf Bestellung 1616 Stücke: Lieferzeit 10-14 Tag (e) |
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GNP2070TD-ZTR | ROHM |
Description: ROHM - GNP2070TD-ZTR - Galliumnitrid (GaN)-Transistor, 650 V, 27 A, 0.098 ohm, 5.2 nC, TOLL, Oberflächenmontage tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 27A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N Gate-Ladung, typ.: 5.2nC SVHC: No SVHC (25-Jun-2025) Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.098ohm |
auf Bestellung 383 Stücke: Lieferzeit 14-21 Tag (e) |
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GNP2070TD-ZTR | ROHM |
Description: ROHM - GNP2070TD-ZTR - Galliumnitrid (GaN)-Transistor, 650 V, 27 A, 0.098 ohm, 5.2 nC, TOLL, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 27A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 5.2nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TOLL Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.098ohm |
auf Bestellung 383 Stücke: Lieferzeit 14-21 Tag (e) |
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| GNP2070TD-ZTR |
|
Hersteller: Rohm Semiconductor
Description: ECOGAN?, 650V 27A TOLL-8N, E-MOD
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 8A, 6V
Power Dissipation (Max): 159W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 5V, 6V
Vgs (Max): +6.5V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V
Description: ECOGAN?, 650V 27A TOLL-8N, E-MOD
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 8A, 6V
Power Dissipation (Max): 159W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 18mA
Supplier Device Package: TOLL-8N
Drive Voltage (Max Rds On, Min Rds On): 5V, 6V
Vgs (Max): +6.5V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V
auf Bestellung 1616 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.79 EUR |
| 10+ | 16.58 EUR |
| 100+ | 13.41 EUR |
| GNP2070TD-ZTR |
|
Hersteller: ROHM
Description: ROHM - GNP2070TD-ZTR - Galliumnitrid (GaN)-Transistor, 650 V, 27 A, 0.098 ohm, 5.2 nC, TOLL, Oberflächenmontage
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 27A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Ladung, typ.: 5.2nC
SVHC: No SVHC (25-Jun-2025)
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.098ohm
Description: ROHM - GNP2070TD-ZTR - Galliumnitrid (GaN)-Transistor, 650 V, 27 A, 0.098 ohm, 5.2 nC, TOLL, Oberflächenmontage
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 27A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
Gate-Ladung, typ.: 5.2nC
SVHC: No SVHC (25-Jun-2025)
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.098ohm
auf Bestellung 383 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 26.76 EUR |
| 11+ | 22.55 EUR |
| 12+ | 18.68 EUR |
| 50+ | 17.61 EUR |
| 100+ | 16.52 EUR |
| 250+ | 16.2 EUR |
| GNP2070TD-ZTR |
|
Hersteller: ROHM
Description: ROHM - GNP2070TD-ZTR - Galliumnitrid (GaN)-Transistor, 650 V, 27 A, 0.098 ohm, 5.2 nC, TOLL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 27A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 5.2nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TOLL
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.098ohm
Description: ROHM - GNP2070TD-ZTR - Galliumnitrid (GaN)-Transistor, 650 V, 27 A, 0.098 ohm, 5.2 nC, TOLL, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 27A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 5.2nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TOLL
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.098ohm
auf Bestellung 383 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 26.76 EUR |
| 11+ | 22.55 EUR |
| 12+ | 18.68 EUR |
| 50+ | 17.61 EUR |
| 100+ | 16.52 EUR |
| 250+ | 16.2 EUR |