| Anzahl | Preis |
|---|---|
| 1+ | 18.85 EUR |
| 10+ | 15.35 EUR |
| 100+ | 13.57 EUR |
| 500+ | 13.55 EUR |
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Technische Details GNP2070TD-ZTR ROHM Semiconductor
Description: ECOGAN?, 650V 27A TOLL-8N, E-MOD, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 8A, 6V, Power Dissipation (Max): 159W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 18mA, Supplier Device Package: TOLL-8N, Drive Voltage (Max Rds On, Min Rds On): 5V, 6V, Vgs (Max): +6.5V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V.
Weitere Produktangebote GNP2070TD-ZTR nach Preis ab 11.27 EUR bis 19.99 EUR
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GNP2070TD-ZTR | Hersteller : Rohm Semiconductor |
 Description: ECOGAN?, 650V 27A TOLL-8N, E-MODPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 8A, 6V Power Dissipation (Max): 159W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 18mA Supplier Device Package: TOLL-8N Drive Voltage (Max Rds On, Min Rds On): 5V, 6V Vgs (Max): +6.5V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V |
auf Bestellung 1616 Stücke: Lieferzeit 10-14 Tag (e) |
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GNP2070TD-ZTR | Hersteller : ROHM |
Description: ROHM - GNP2070TD-ZTR - Galliumnitrid (GaN)-Transistor, 650 V, 27 A, 0.098 ohm, 5.2 nC, TOLL, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 27A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 5.2nC Bauform - Transistor: TOLL Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.098ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 383 Stücke: Lieferzeit 14-21 Tag (e) |
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GNP2070TD-ZTR | Hersteller : ROHM |
Description: ROHM - GNP2070TD-ZTR - Galliumnitrid (GaN)-Transistor, 650 V, 27 A, 0.098 ohm, 5.2 nC, TOLL, Oberflächenmontage tariffCode: 85412900 productTraceability: No Gate-Ladung, typ.: 5.2nC rohsCompliant: YES Anzahl der Pins: 8Pin(s) euEccn: NLR isCanonical: N hazardous: false Drain-Source-Spannung Vds: 650V Drain-Source-Durchgangswiderstand: 0.098ohm rohsPhthalatesCompliant: YES Dauer-Drainstrom Id: 27A usEccn: EAR99 SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 383 Stücke: Lieferzeit 14-21 Tag (e) |
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GNP2070TD-ZTR | Hersteller : Rohm Semiconductor |
Description: ECOGAN?, 650V 27A TOLL-8N, E-MOD Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 8A, 6V Power Dissipation (Max): 159W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 18mA Supplier Device Package: TOLL-8N Drive Voltage (Max Rds On, Min Rds On): 5V, 6V Vgs (Max): +6.5V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 400 V |
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