auf Bestellung 92 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 45.16 EUR |
10+ | 39.81 EUR |
30+ | 38.71 EUR |
60+ | 36.53 EUR |
120+ | 34.37 EUR |
270+ | 33.33 EUR |
510+ | 31.17 EUR |
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Technische Details GP2T040A120H SemiQ
Description: SIC MOSFET 1200V 40M TO-247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V, Power Dissipation (Max): 322W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3192 pF @ 1000 V.
Weitere Produktangebote GP2T040A120H nach Preis ab 34.42 EUR bis 37.45 EUR
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GP2T040A120H | Hersteller : SemiQ |
Description: SIC MOSFET 1200V 40M TO-247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V Power Dissipation (Max): 322W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3192 pF @ 1000 V |
auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
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