auf Bestellung 48 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 43.58 EUR |
| 10+ | 38.4 EUR |
| 30+ | 37.36 EUR |
| 60+ | 35.26 EUR |
| 120+ | 33.18 EUR |
| 270+ | 32.14 EUR |
| 510+ | 30.06 EUR |
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Technische Details GP2T040A120U SemiQ
Description: SIC MOSFET 1200V 40M TO-247-3L, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V, Power Dissipation (Max): 322W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3192 pF @ 1000 V.
Weitere Produktangebote GP2T040A120U nach Preis ab 33.7 EUR bis 36.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| GP2T040A120U | Hersteller : SemiQ |
 Description: SIC MOSFET 1200V 40M TO-247-3LPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 20V Power Dissipation (Max): 322W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3192 pF @ 1000 V |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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