auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.74 EUR |
| 10+ | 16.07 EUR |
| 30+ | 14.56 EUR |
| 120+ | 13.38 EUR |
| 270+ | 12.57 EUR |
| 510+ | 11.79 EUR |
| 1020+ | 10.61 EUR |
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Technische Details GP2T080A120H SemiQ
Description: SIC MOSFET 1200V 80M TO-247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 1000 V.
Weitere Produktangebote GP2T080A120H nach Preis ab 17.94 EUR bis 19.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| GP2T080A120H | Hersteller : SemiQ |
 Description: SIC MOSFET 1200V 80M TO-247-4LPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1377 pF @ 1000 V |
auf Bestellung 65 Stücke: Lieferzeit 10-14 Tag (e) |
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