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GP3D005A170B

GP3D005A170B SemiQ

GP3D005A170B.pdf Hersteller: SemiQ
Description: DIODE SIL CARB 1700V 21A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 347pF @ 1V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 1700
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
auf Bestellung 2786 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.6 EUR
30+3.65 EUR
120+3 EUR
510+2.52 EUR
1020+2.35 EUR
2010+2.3 EUR
Mindestbestellmenge: 3
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Technische Details GP3D005A170B SemiQ

Description: DIODE SIL CARB 1700V 21A TO2472, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 347pF @ 1V, 1MHz, Current - Average Rectified (Io): 21A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5, Voltage Coupled to Current - Reverse Leakage @ Vr: 1700, Current - Reverse Leakage @ Vr: 20 µA @ 1700 V.

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GP3D005A170B GP3D005A170B Hersteller : SemiQ GP3D005A170B.pdf SiC Schottky Diodes SiC Schottky Diode 5A 1700V TO-247-2
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