| Anzahl | Preis |
|---|---|
| 1+ | 6.53 EUR |
| 10+ | 3.64 EUR |
| 120+ | 2.97 EUR |
| 510+ | 2.62 EUR |
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Technische Details GP3D005A170B SemiQ
Description: DIODE SIL CARB 1700V 21A TO2472, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 347pF @ 1V, 1MHz, Current - Average Rectified (Io): 21A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A, Current - Reverse Leakage @ Vr: 20 µA @ 1700 V, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5, Voltage Coupled to Current - Reverse Leakage @ Vr: 1700.
Weitere Produktangebote GP3D005A170B nach Preis ab 2.34 EUR bis 7.02 EUR
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GP3D005A170B | Hersteller : SemiQ |
 Description: DIODE SIL CARB 1700V 21A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 347pF @ 1V, 1MHz Current - Average Rectified (Io): 21A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5 Voltage Coupled to Current - Reverse Leakage @ Vr: 1700 |
auf Bestellung 2327 Stücke: Lieferzeit 10-14 Tag (e) |
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| GP3D005A170B | Hersteller : --- |
DIODE SIL CARB 1.7KV 21A TO247-2 Група товару: Діоди та діодні збірки Од. вим: шт |
Produkt ist nicht verfügbar |