GP3D005A170B SemiQ
Hersteller: SemiQDescription: DIODE SIL CARB 1700V 21A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 347pF @ 1V, 1MHz
Current - Average Rectified (Io): 21A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 1700
auf Bestellung 725 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.10 EUR |
| 30+ | 4.54 EUR |
| 120+ | 3.76 EUR |
| 510+ | 3.18 EUR |
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Technische Details GP3D005A170B SemiQ
Description: DIODE SIL CARB 1700V 21A TO2472, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 347pF @ 1V, 1MHz, Current - Average Rectified (Io): 21A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A, Current - Reverse Leakage @ Vr: 20 µA @ 1700 V, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5, Voltage Coupled to Current - Reverse Leakage @ Vr: 1700.
Weitere Produktangebote GP3D005A170B nach Preis ab 4.51 EUR bis 9.73 EUR
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GP3D005A170B | Hersteller : SemiQ |
SiC Schottky Diodes SiC Schottky Diode 5A 1700V TO-247-2 |
auf Bestellung 1327 Stücke: Lieferzeit 10-14 Tag (e) |
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