auf Bestellung 92 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.7 EUR |
| 10+ | 3.73 EUR |
| 120+ | 3.19 EUR |
| 510+ | 2.8 EUR |
| 1020+ | 2.39 EUR |
| 2520+ | 2.27 EUR |
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Technische Details GP3D010A065B SemiQ
Description: DIODE SIL CARB 650V 10A TO247-2, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 419pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A, Current - Reverse Leakage @ Vr: 25 µA @ 650 V.
Weitere Produktangebote GP3D010A065B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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GP3D010A065B | Hersteller : SemiQ |
 Description: DIODE SIL CARB 650V 10A TO247-2Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 419pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Current - Reverse Leakage @ Vr: 25 µA @ 650 V |
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