auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 14.34 EUR |
| 10+ | 8.82 EUR |
| 120+ | 8.78 EUR |
| 270+ | 7.71 EUR |
| 2520+ | 7.69 EUR |
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Technische Details GP3D010A170B SemiQ
Description: DIODE SIL CARB 1.7KV 39A TO247-2, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 699pF @ 1V, 1MHz, Current - Average Rectified (Io): 39A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A, Current - Reverse Leakage @ Vr: 40 µA @ 1700 V.
Weitere Produktangebote GP3D010A170B nach Preis ab 9.26 EUR bis 15.05 EUR
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GP3D010A170B | Hersteller : SemiQ |
 Description: DIODE SIL CARB 1.7KV 39A TO247-2Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 699pF @ 1V, 1MHz Current - Average Rectified (Io): 39A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 1700 V |
auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
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