GP3D012A065B SemiQ
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.79 EUR |
| 10+ | 5.83 EUR |
| 120+ | 5.28 EUR |
| 270+ | 5.12 EUR |
| 510+ | 4.82 EUR |
| 1020+ | 4.38 EUR |
| 5010+ | 4.31 EUR |
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Technische Details GP3D012A065B SemiQ
Description: DIODE SIL CARB 650V 12A TO247-2, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 572pF @ 1V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A, Current - Reverse Leakage @ Vr: 30 µA @ 650 V.
Weitere Produktangebote GP3D012A065B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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GP3D012A065B | Hersteller : SemiQ |
 Description: DIODE SIL CARB 650V 12A TO247-2Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 572pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |