GP3D015A120A SemiQ
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.78 EUR |
| 10+ | 10.96 EUR |
| 100+ | 9.12 EUR |
| 250+ | 8.92 EUR |
| 500+ | 8.06 EUR |
| 1000+ | 6.79 EUR |
| 5000+ | 6.71 EUR |
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Technische Details GP3D015A120A SemiQ
Description: DIODE SIL CARB 1.2KV 15A TO220-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 962pF @ 1V, 1MHz, Current - Average Rectified (Io): 15A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A, Current - Reverse Leakage @ Vr: 30 µA @ 1200 V.
Weitere Produktangebote GP3D015A120A nach Preis ab 12.67 EUR bis 14.03 EUR
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GP3D015A120A | Hersteller : SemiQ |
 Description: DIODE SIL CARB 1.2KV 15A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 962pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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