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GP3D020A065A

GP3D020A065A SemiQ

GP3D020A065A-1916731.pdf Hersteller: SemiQ
Schottky Diodes & Rectifiers SiC Schottky Diode 20A 650V TO-220
auf Bestellung 90 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+14.87 EUR
10+ 12.51 EUR
100+ 10.87 EUR
250+ 10.53 EUR
500+ 10.22 EUR
1000+ 8.81 EUR
2500+ 8.58 EUR
Mindestbestellmenge: 4
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Technische Details GP3D020A065A SemiQ

Description: DIODE SIL CARB 650V 20A TO220-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1247pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A, Current - Reverse Leakage @ Vr: 75 µA @ 650 V.

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GP3D020A065A GP3D020A065A Hersteller : SemiQ GP3D020A065A.pdf Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1247pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
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