GP3D020A065A SemiQ
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.15 EUR |
| 100+ | 5.95 EUR |
| 250+ | 5.77 EUR |
| 500+ | 5.63 EUR |
| 1000+ | 5.26 EUR |
| 2500+ | 5.14 EUR |
| 5000+ | 5.05 EUR |
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Technische Details GP3D020A065A SemiQ
Description: DIODE SIL CARB 650V 20A TO220-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1247pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A, Current - Reverse Leakage @ Vr: 75 µA @ 650 V.
Weitere Produktangebote GP3D020A065A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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GP3D020A065A | Hersteller : SemiQ |
 Description: DIODE SIL CARB 650V 20A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1247pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A Current - Reverse Leakage @ Vr: 75 µA @ 650 V |
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