GP3D020A065A SemiQ
| Anzahl | Preis |
|---|---|
| 1+ | 8.15 EUR |
| 100+ | 5.95 EUR |
| 250+ | 5.77 EUR |
| 500+ | 5.63 EUR |
| 1000+ | 5.26 EUR |
| 2500+ | 5.14 EUR |
| 5000+ | 5.05 EUR |
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Technische Details GP3D020A065A SemiQ
Description: DIODE SIL CARB 650V 20A TO220-2, Current - Reverse Leakage @ Vr: 75 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220-2, Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 1247pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote GP3D020A065A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
GP3D020A065A | SemiQ |
 Description: DIODE SIL CARB 650V 20A TO220-2Current - Reverse Leakage @ Vr: 75 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 1247pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GP3D020A065A |
|
Hersteller: SemiQ
Description: DIODE SIL CARB 650V 20A TO220-2
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1247pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE SIL CARB 650V 20A TO220-2
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1247pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH