GP3D020A065B SemiQ
| Anzahl | Preis |
|---|---|
| 1+ | 8.59 EUR |
| 10+ | 6.81 EUR |
| 120+ | 5.83 EUR |
| 510+ | 5.17 EUR |
| 1020+ | 4.17 EUR |
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Technische Details GP3D020A065B SemiQ
Description: DIODE SIL CARB 650V 20A TO247-2, Current - Reverse Leakage @ Vr: 50 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 835pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.
Weitere Produktangebote GP3D020A065B nach Preis ab 5.56 EUR bis 10.3 EUR
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GP3D020A065B | SemiQ |
 Description: DIODE SIL CARB 650V 20A TO247-2Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 835pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
auf Bestellung 59 Stücke: Lieferzeit 10-14 Tag (e) |
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| GP3D020A065B |
|
Hersteller: SemiQ
Description: DIODE SIL CARB 650V 20A TO247-2
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 835pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Description: DIODE SIL CARB 650V 20A TO247-2
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 835pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.3 EUR |
| 30+ | 5.56 EUR |