GP3D024A065U SemiQ
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.45 EUR |
| 10+ | 9.47 EUR |
| 120+ | 8.27 EUR |
| 270+ | 8.08 EUR |
| 510+ | 7.57 EUR |
| 1020+ | 6.95 EUR |
| 2520+ | 6.74 EUR |
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Technische Details GP3D024A065U SemiQ
Description: DIODE ARR SIC 650V 12A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 12A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A, Current - Reverse Leakage @ Vr: 30 µA @ 650 V.
Weitere Produktangebote GP3D024A065U
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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GP3D024A065U | Hersteller : SemiQ |
 Description: DIODE ARR SIC 650V 12A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 12A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
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