auf Bestellung 66 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.36 EUR |
| 10+ | 6.20 EUR |
| 120+ | 6.18 EUR |
| 10020+ | 6.16 EUR |
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Technische Details GP3D030A065B SemiQ
Description: DIODE SIL CARB 650V 30A TO247-2, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1247pF @ 1V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A, Current - Reverse Leakage @ Vr: 75 µA @ 650 V.
Weitere Produktangebote GP3D030A065B nach Preis ab 6.19 EUR bis 10.52 EUR
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GP3D030A065B | Hersteller : SemiQ |
 Description: DIODE SIL CARB 650V 30A TO247-2Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1247pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A Current - Reverse Leakage @ Vr: 75 µA @ 650 V |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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