GP3D030A065B SemiQ
Hersteller: SemiQ
Description: DIODE SIL CARB 650V 30A TO247-2
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 1247pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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Technische Details GP3D030A065B SemiQ
Description: DIODE SIL CARB 650V 30A TO247-2, Current - Reverse Leakage @ Vr: 75 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 30A, Capacitance @ Vr, F: 1247pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.
Weitere Produktangebote GP3D030A065B nach Preis ab 4.86 EUR bis 12.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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GP3D030A065B | SemiQ |
SiC Schottky Diodes SiC Schottky Diode 30A 650V TO-247-2 |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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| GP3D030A065B |
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Hersteller: SemiQ
SiC Schottky Diodes SiC Schottky Diode 30A 650V TO-247-2
SiC Schottky Diodes SiC Schottky Diode 30A 650V TO-247-2
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.82 EUR |
| 10+ | 8.4 EUR |
| 120+ | 6.18 EUR |
| 510+ | 5.49 EUR |
| 1020+ | 4.86 EUR |