auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 13.2 EUR |
| 120+ | 13.18 EUR |
| 510+ | 12.9 EUR |
| 1020+ | 12.48 EUR |
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Technische Details GP3D030A120B SemiQ
Description: DIODE SIL CARB 1200V 30A TO2472, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1762pF @ 1V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A, Current - Reverse Leakage @ Vr: 60 µA @ 1200 V.
Weitere Produktangebote GP3D030A120B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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GP3D030A120B | Hersteller : SemiQ |
 Description: DIODE SIL CARB 1200V 30A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1762pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Current - Reverse Leakage @ Vr: 60 µA @ 1200 V |
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