| Anzahl | Preis |
|---|---|
| 1+ | 14.15 EUR |
| 10+ | 12.9 EUR |
| 120+ | 11.93 EUR |
| 510+ | 11.4 EUR |
| 1020+ | 10.95 EUR |
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Technische Details GP3D030A120B SemiQ
Description: DIODE SIL CARB 1200V 30A TO2472, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 60 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 30A, Capacitance @ Vr, F: 1762pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky.
Weitere Produktangebote GP3D030A120B
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
GP3D030A120B | SemiQ |
 Description: DIODE SIL CARB 1200V 30A TO2472Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube Current - Reverse Leakage @ Vr: 60 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 30A Capacitance @ Vr, F: 1762pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GP3D030A120B |
|
Hersteller: SemiQ
Description: DIODE SIL CARB 1200V 30A TO2472
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 1762pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Description: DIODE SIL CARB 1200V 30A TO2472
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 1762pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH