GP3T080A120TS SemiQ

Description: GEN3 1200V 80M SIC MOSFET TSPAK, Input Capacitance (Ciss) (Max) @ Vds: 1351 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -8V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TSPAK, Vgs(th) (Max) @ Id: 4V @ 5mA, Power Dissipation (Max): 102W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant, Packaging: Tube.