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GPA025A120MN-ND

GPA025A120MN-ND SemiQ

GPA025A120MN-ND_REV1.1_10-13.pdf
Hersteller: SemiQ
Description: IGBT 1200V 50A 312W TO3PN
Power - Max: 312 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Gate Charge: 350 nC
Test Condition: 600V, 25A, 10Ohm, 15V
Switching Energy: 4.15mJ (on), 870µJ (off)
Td (on/off) @ 25°C: 57ns/240ns
IGBT Type: NPT and Trench
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
Reverse Recovery Time (trr): 480 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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Technische Details GPA025A120MN-ND SemiQ

Description: IGBT 1200V 50A 312W TO3PN, Power - Max: 312 W, Current - Collector Pulsed (Icm): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 50 A, Gate Charge: 350 nC, Test Condition: 600V, 25A, 10Ohm, 15V, Switching Energy: 4.15mJ (on), 870µJ (off), Td (on/off) @ 25°C: 57ns/240ns, IGBT Type: NPT and Trench, Supplier Device Package: TO-3PN, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A, Reverse Recovery Time (trr): 480 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.