Produkte > SEMIQ > GPA025A120MN-ND
GPA025A120MN-ND

GPA025A120MN-ND SemiQ

GPA025A120MN-ND_REV1.1_10-13.pdf Hersteller: SemiQ
Description: IGBT 1200V 50A 312W TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 480 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
Supplier Device Package: TO-3PN
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 57ns/240ns
Switching Energy: 4.15mJ (on), 870µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 350 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 312 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details GPA025A120MN-ND SemiQ

Description: IGBT 1200V 50A 312W TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 480 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A, Supplier Device Package: TO-3PN, IGBT Type: NPT and Trench, Td (on/off) @ 25°C: 57ns/240ns, Switching Energy: 4.15mJ (on), 870µJ (off), Test Condition: 600V, 25A, 10Ohm, 15V, Gate Charge: 350 nC, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 312 W.