GPI4TIC15DFV GaNPower
Hersteller: GaNPowerDescription: Power IC based on Power GaN HEMT
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Configuration: N-Channel
Technology: MOSFET
Supplier Device Package: 8-DFN (8x8)
Part Status: Active
Voltage - Rated: 900 V
Voltage - Test: 6.5 V
Current - Test: 2.5 A
auf Bestellung 211 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 16.47 EUR |
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Technische Details GPI4TIC15DFV GaNPower
Description: Power IC based on Power GaN HEMT, Packaging: Tube, Package / Case: 8-WDFN Exposed Pad, Configuration: N-Channel, Technology: MOSFET, Supplier Device Package: 8-DFN (8x8), Part Status: Active, Voltage - Rated: 900 V, Voltage - Test: 6.5 V, Current - Test: 2.5 A.