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GPI4TIC15DFV GaNPower

GPI4TIC15DFV-v2.0.pdf
Hersteller: GaNPower
Description: Power IC based on Power GaN HEMT
Configuration: N-Channel
Package / Case: 8-WDFN Exposed Pad
Packaging: Tube
Current - Test: 2.5 A
Voltage - Test: 6.5 V
Voltage - Rated: 900 V
Part Status: Active
Supplier Device Package: 8-DFN (8x8)
Technology: MOSFET
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Technische Details GPI4TIC15DFV GaNPower

Description: Power IC based on Power GaN HEMT, Configuration: N-Channel, Package / Case: 8-WDFN Exposed Pad, Packaging: Tube, Current - Test: 2.5 A, Voltage - Test: 6.5 V, Voltage - Rated: 900 V, Part Status: Active, Supplier Device Package: 8-DFN (8x8), Technology: MOSFET.