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GPI6TIC15DFV

GPI6TIC15DFV GaNPower

GPI6TIC15DFV-v2.0.pdf
Hersteller: GaNPower
Description: Power IC based on Power GaN HEMT
Current - Test: 2.5 A
Voltage - Test: 6.5 V
Voltage - Rated: 900 V
Part Status: Active
Supplier Device Package: 8-DFN (8x8)
Technology: GaNFET (Gallium Nitride)
Configuration: N-Channel
Package / Case: 8-WDFN Exposed Pad
Packaging: Tube
Drain to Source Voltage (Vdss): 900 V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 0V
Mounting Type: Surface Mount
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Technische Details GPI6TIC15DFV GaNPower

Description: Power IC based on Power GaN HEMT, Current - Test: 2.5 A, Voltage - Test: 6.5 V, Voltage - Rated: 900 V, Part Status: Active, Supplier Device Package: 8-DFN (8x8), Technology: GaNFET (Gallium Nitride), Configuration: N-Channel, Package / Case: 8-WDFN Exposed Pad, Packaging: Tube, Drain to Source Voltage (Vdss): 900 V, Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 0V, Mounting Type: Surface Mount.