GPT65C0YME MGT BRIGHTEK

Category: SMD N channel transistors, Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V, Type of transistor: N-JFET / N-MOSFET, Technology: GaN, Polarisation: unipolar, Kind of transistor: cascode; HEMT, Drain-source voltage: 650V, Drain current: 6A, Pulsed drain current: 31A, Case: DFN8080, Gate-source voltage: ±20V, On-state resistance: 245mΩ, Mounting: SMD, Gate charge: 22nC, Kind of package: tape, Power dissipation: 38W, Anzahl je Verpackung: 2500 Stücke.