GPT65Z4YMR MGT BRIGHTEK

Category: SMD N channel transistors, Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V, Technology: GaN, Case: DFN8080, Mounting: SMD, Kind of package: tape, On-state resistance: 0.13Ω, Pulsed drain current: 80A, Power dissipation: 67.5W, Gate charge: 38nC, Polarisation: unipolar, Drain current: 11.5A, Drain-source voltage: 650V, Kind of transistor: cascode; HEMT, Type of transistor: N-JFET / N-MOSFET, Gate-source voltage: ±20V.