GPT65Z4YMR MGT BRIGHTEK

Category: SMD N channel transistors, Description: Transistor: N-JFET / N-MOSFET; GaN; unipolar; HEMT,cascode; 650V, Type of transistor: N-JFET / N-MOSFET, Technology: GaN, Drain-source voltage: 650V, Drain current: 11.5A, Power dissipation: 67.5W, Gate-source voltage: ±20V, On-state resistance: 0.13Ω, Mounting: SMD, Gate charge: 38nC, Pulsed drain current: 80A, Polarisation: unipolar, Kind of transistor: cascode; HEMT, Kind of package: tape, Case: DFN8080.