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GS-065-004-1-L-MR

GS-065-004-1-L-MR Infineon Technologies

GS_065_004_1_L_DS_Rev_220712-3440192.pdf Hersteller: Infineon Technologies
GaN FETs 650V, 4A, GaN E-mode, 5x6 PDFN, Bottom-side cooled
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Technische Details GS-065-004-1-L-MR Infineon Technologies

Description: GS-065-004-1-L-MR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 570mOhm @ 1.2A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 400 V.

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GS-065-004-1-L-MR
Produktcode: 195374
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Transistoren > MOSFET N-CH
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GS-065-004-1-L-MR Hersteller : GaN Systems gs-065-004-1-l-ds-rev-210322.pdf GS-065-004-1-L-MR
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GS-065-004-1-L-MR GS-065-004-1-L-MR Hersteller : Infineon Technologies Canada Inc. Description: GS-065-004-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 1.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS-065-004-1-L-MR GS-065-004-1-L-MR Hersteller : Infineon Technologies Canada Inc. Description: GS-065-004-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 1.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH