Weitere Produktangebote GS-065-004-1-L-MR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| GS-065-004-1-L-MR | Hersteller : GaN Systems |
 GS-065-004-1-L-MR |
Produkt ist nicht verfügbar |
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GS-065-004-1-L-MR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS-065-004-1-L-MR Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 1.2A, 6V Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 400 V |
Produkt ist nicht verfügbar |
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GS-065-004-1-L-MR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS-065-004-1-L-MR Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 570mOhm @ 1.2A, 6V Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 400 V |
Produkt ist nicht verfügbar |
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GS-065-004-1-L-MR | Hersteller : Infineon Technologies |
GaN FETs 650V, 4A, GaN E-mode, 5x6 PDFN, Bottom-side cooled |
Produkt ist nicht verfügbar |