GS-065-008-1-L-MR Infineon Technologies
auf Bestellung 337 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.23 EUR |
| 10+ | 5.79 EUR |
| 100+ | 4.7 EUR |
| 500+ | 4.15 EUR |
| 1000+ | 3.56 EUR |
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Technische Details GS-065-008-1-L-MR Infineon Technologies
Description: GS-065-008-1-L-MR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 225mOhm @ 2.2A, 6V, Vgs(th) (Max) @ Id: 1.4V @ 1.74mA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 400 V.
Weitere Produktangebote GS-065-008-1-L-MR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| GS-065-008-1-L-MR | Hersteller : GaN Systems |
 Trans MOSFET N-CH GaN 650V 8A 8-Pin PDFN EP Reel |
Produkt ist nicht verfügbar |
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GS-065-008-1-L-MR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS-065-008-1-L-MR Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 2.2A, 6V Vgs(th) (Max) @ Id: 1.4V @ 1.74mA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 400 V |
Produkt ist nicht verfügbar |
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GS-065-008-1-L-MR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS-065-008-1-L-MR Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 2.2A, 6V Vgs(th) (Max) @ Id: 1.4V @ 1.74mA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 400 V |
Produkt ist nicht verfügbar |