GS-065-008-6-L-MR Infineon Technologies Canada Inc.
Hersteller: Infineon Technologies Canada Inc.
Description: GS-065-008-6-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.7mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V
Description: GS-065-008-6-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.7mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 4.23 EUR |
| 500+ | 4.14 EUR |
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Technische Details GS-065-008-6-L-MR Infineon Technologies Canada Inc.
Description: GS-065-008-6-L-MR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc), Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 1.7mA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V.
Weitere Produktangebote GS-065-008-6-L-MR nach Preis ab 3.04 EUR bis 8.91 EUR
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GS-065-008-6-L-MR | Hersteller : Infineon Technologies |
 GaN FETs CoolGaN Transistor 700 V G4 for ultimate efficiency and reliability |
auf Bestellung 247 Stücke: Lieferzeit 10-14 Tag (e) |
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GS-065-008-6-L-MR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS-065-008-6-L-MR Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V Vgs(th) (Max) @ Id: 2.6V @ 1.7mA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V |
auf Bestellung 942 Stücke: Lieferzeit 10-14 Tag (e) |
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| GS-065-008-6-L-MR | Hersteller : GaN Systems | GS-065-008-6-L-MR |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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| GS-065-008-6-L-MR | Hersteller : GaN Systems Inc | GS-065-008-6-L-MR |
Produkt ist nicht verfügbar |