Produkte > INFINEON TECHNOLOGIES CANADA INC. > GS-065-008-6-L-MR
GS-065-008-6-L-MR

GS-065-008-6-L-MR Infineon Technologies Canada Inc.


Hersteller: Infineon Technologies Canada Inc.
Description: GS-065-008-6-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.7mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
250+5.03 EUR
500+4.93 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details GS-065-008-6-L-MR Infineon Technologies Canada Inc.

Description: GS-065-008-6-L-MR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc), Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 1.7mA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V.

Weitere Produktangebote GS-065-008-6-L-MR nach Preis ab 3.27 EUR bis 10.6 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
GS-065-008-6-L-MR GS-065-008-6-L-MR Infineon Technologies Infineon-GS-065-008-6-L-MR-DataSheet-v01_00-EN.pdf GaN FETs LEGACY GAN SYSTEMS
auf Bestellung 171 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.83 EUR
10+5.18 EUR
100+3.37 EUR
500+3.36 EUR
5000+3.27 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GS-065-008-6-L-MR GS-065-008-6-L-MR Infineon Technologies Canada Inc. Description: GS-065-008-6-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.7mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V
auf Bestellung 942 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.6 EUR
10+7.43 EUR
100+5.55 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GS-065-008-6-L-MR Infineon-GS-065-008-6-L-MR-DataSheet-v01_00-EN.pdf
GS-065-008-6-L-MR
Hersteller: Infineon Technologies
GaN FETs LEGACY GAN SYSTEMS
auf Bestellung 171 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+7.83 EUR
10+5.18 EUR
100+3.37 EUR
500+3.36 EUR
5000+3.27 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GS-065-008-6-L-MR
GS-065-008-6-L-MR
Hersteller: Infineon Technologies Canada Inc.
Description: GS-065-008-6-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 2.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.7mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 400 V
auf Bestellung 942 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.6 EUR
10+7.43 EUR
100+5.55 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH