Technische Details GS-065-011-1-L-MR GaN Systems Inc
Description: GS-065-011-1-L-MR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 2.4mA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V.
Weitere Produktangebote GS-065-011-1-L-MR nach Preis ab 3.8 EUR bis 13.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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GS-065-011-1-L-MR | GaN Systems Inc |
 Trans MOSFET N-CH GaN 650V 11A 7-Pin PDFN EP |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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GS-065-011-1-L-MR | Infineon Technologies |
GaN FETs LEGACY GAN SYSTEMS |
auf Bestellung 2537 Stücke: Lieferzeit 10-14 Tag (e) |
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GS-065-011-1-L-MR | Infineon Technologies Canada Inc. |
Description: GS-065-011-1-L-MR Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V Vgs(th) (Max) @ Id: 2.6V @ 2.4mA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V |
auf Bestellung 220 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GS-065-011-1-L-MR |
|
Hersteller: GaN Systems Inc
Trans MOSFET N-CH GaN 650V 11A 7-Pin PDFN EP
Trans MOSFET N-CH GaN 650V 11A 7-Pin PDFN EP
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 6.78 EUR |
| GS-065-011-1-L-MR |
|
Hersteller: Infineon Technologies
GaN FETs LEGACY GAN SYSTEMS
GaN FETs LEGACY GAN SYSTEMS
auf Bestellung 2537 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.72 EUR |
| 10+ | 6.47 EUR |
| 100+ | 4.44 EUR |
| 500+ | 4.13 EUR |
| 1000+ | 3.8 EUR |
| GS-065-011-1-L-MR |
Hersteller: Infineon Technologies Canada Inc.
Description: GS-065-011-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
Description: GS-065-011-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.42 EUR |
| 10+ | 9.08 EUR |
| 100+ | 6.6 EUR |