auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.6 EUR |
| 10+ | 8.89 EUR |
| 25+ | 8.4 EUR |
| 100+ | 7.53 EUR |
| 250+ | 6.37 EUR |
| 1000+ | 5.46 EUR |
| 2500+ | 5.14 EUR |
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Technische Details GS-065-011-6-L-MR GaN Systems
Description: GS-065-011-6-L-MR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 2.4mA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V.
Weitere Produktangebote GS-065-011-6-L-MR nach Preis ab 5.14 EUR bis 10.6 EUR
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GS-065-011-6-L-MR | Hersteller : Infineon Technologies |
 GaN FETs CoolGaN Transistor 700 V G4 for ultimate efficiency and reliability |
auf Bestellung 325 Stücke: Lieferzeit 10-14 Tag (e) |
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| GS-065-011-6-L-MR | Hersteller : GaN Systems | GS-065-011-6-L-MR |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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GS-065-011-6-L-MR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS-065-011-6-L-MR Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V Vgs(th) (Max) @ Id: 2.6V @ 2.4mA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V |
Produkt ist nicht verfügbar |
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GS-065-011-6-L-MR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS-065-011-6-L-MR Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V Vgs(th) (Max) @ Id: 2.6V @ 2.4mA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V |
Produkt ist nicht verfügbar |