GS-065-011-6-LR-MR

GS-065-011-6-LR-MR Infineon Technologies Canada Inc.


Hersteller: Infineon Technologies Canada Inc.
Description: GS-065-011-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
auf Bestellung 250 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+4.59 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details GS-065-011-6-LR-MR Infineon Technologies Canada Inc.

Description: GS-065-011-6-LR-MR, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 2.4mA, Supplier Device Package: 8-PDFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V.

Weitere Produktangebote GS-065-011-6-LR-MR nach Preis ab 5.05 EUR bis 10.60 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
GS-065-011-6-LR-MR GS-065-011-6-LR-MR Hersteller : Infineon Technologies Canada Inc. Description: GS-065-011-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.57 EUR
10+6.72 EUR
100+5.05 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
GS-065-011-6-LR-MR GS-065-011-6-LR-MR Hersteller : GaN Systems Infineon_GS_065_011_6_LR_TR_DataSheet_v01_00_EN-3440091.pdf MOSFETs
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.60 EUR
10+8.89 EUR
25+8.40 EUR
100+7.53 EUR
250+6.37 EUR
1000+5.46 EUR
2500+5.14 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GS-065-011-6-LR-MR GS-065-011-6-LR-MR Hersteller : Infineon Technologies Infineon_GS_065_011_6_LR_TR_DataSheet_v01_00_EN-3440091.pdf GaN FETs CoolGaN Transistor 700 V G4 for ultimate efficiency and reliability
auf Bestellung 461 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.60 EUR
10+8.89 EUR
25+8.40 EUR
100+7.53 EUR
250+6.37 EUR
1000+5.46 EUR
2500+5.14 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GS-065-011-6-LR-MR Hersteller : GaN Systems GS-065-011-6-LR-MR
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH