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GS-065-014-6-L-MR

GS-065-014-6-L-MR Infineon Technologies

Infineon_GS_065_014_6_L_TR_DataSheet_v01_00_EN-3440020.pdf Hersteller: Infineon Technologies
GaN FETs CoolGaN Transistor 700 V G4 for ultimate efficiency and reliability
auf Bestellung 271 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.43 EUR
10+7.29 EUR
25+6.49 EUR
100+6.11 EUR
500+4.93 EUR
1000+4.59 EUR
2500+4.51 EUR
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Technische Details GS-065-014-6-L-MR Infineon Technologies

Description: GS-065-014-6-L-MR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc), Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 3mA, Supplier Device Package: 8-PDFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V.

Weitere Produktangebote GS-065-014-6-L-MR nach Preis ab 6.92 EUR bis 12.21 EUR

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GS-065-014-6-L-MR GS-065-014-6-L-MR Hersteller : GaN Systems Infineon_GS_065_014_6_L_TR_DataSheet_v01_00_EN-3440020.pdf MOSFETs
auf Bestellung 494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+12.21 EUR
10+10.49 EUR
25+9.5 EUR
100+9.12 EUR
250+7.74 EUR
500+7.69 EUR
1000+6.92 EUR
Im Einkaufswagen  Stück im Wert von  UAH
GS-065-014-6-L-MR Hersteller : GaN Systems GS-065-014-6-L-MR
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
GS-065-014-6-L-MR GS-065-014-6-L-MR Hersteller : Infineon Technologies Canada Inc. Description: GS-065-014-6-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GS-065-014-6-L-MR GS-065-014-6-L-MR Hersteller : Infineon Technologies Canada Inc. Description: GS-065-014-6-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH