GS-065-018-6-LR-MR Infineon Technologies Canada Inc.
Hersteller: Infineon Technologies Canada Inc.
Description: GS-065-018-6-LR-MR
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
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Technische Details GS-065-018-6-LR-MR Infineon Technologies Canada Inc.
Description: GS-065-018-6-LR-MR, Supplier Device Package: 8-PDFN (8x8), Vgs(th) (Max) @ Id: 2.6V @ 4.8mA, Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-VDFN Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): +7V, -10V, Drive Voltage (Max Rds On, Min Rds On): 6V.
Weitere Produktangebote GS-065-018-6-LR-MR nach Preis ab 5.33 EUR bis 14.59 EUR
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GS-065-018-6-LR-MR | Infineon Technologies |
 GaN FETs CoolGaN Transistor 700 V G4 for ultimate efficiency and reliability |
auf Bestellung 298 Stücke: Lieferzeit 10-14 Tag (e) |
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GS-065-018-6-LR-MR | Infineon Technologies Canada Inc. |
Description: GS-065-018-6-LR-MR Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V Vgs(th) (Max) @ Id: 2.6V @ 4.8mA Supplier Device Package: 8-PDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V |
auf Bestellung 325 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GS-065-018-6-LR-MR |
|
Hersteller: Infineon Technologies
GaN FETs CoolGaN Transistor 700 V G4 for ultimate efficiency and reliability
GaN FETs CoolGaN Transistor 700 V G4 for ultimate efficiency and reliability
auf Bestellung 298 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.42 EUR |
| 10+ | 8.06 EUR |
| 100+ | 6.72 EUR |
| 500+ | 5.98 EUR |
| 1000+ | 5.33 EUR |
| GS-065-018-6-LR-MR |
Hersteller: Infineon Technologies Canada Inc.
Description: GS-065-018-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
Description: GS-065-018-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
auf Bestellung 325 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.59 EUR |
| 10+ | 10.45 EUR |
| 100+ | 8.02 EUR |