GS-065-060-5-B-A-MR GaN Systems
Hersteller: GaN Systems
GaN FETs Automotive 650V, 60A, GaN E-mode, GaNPX package, Bottom-side cooled
| Anzahl | Privatkunde |
|---|---|
| 1+ | 89.51 EUR |
| 10+ | 79.78 EUR |
| 25+ | 75.02 EUR |
| 50+ | 73.52 EUR |
| 250+ | 62.75 EUR |
| 1000+ | 61.92 EUR |
| 2500+ | 61.87 EUR |
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Technische Details GS-065-060-5-B-A-MR GaN Systems
Description: GS-065-060-5-B-A-MR, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 16.4mA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V, Qualification: AEC-Q101.
Weitere Produktangebote GS-065-060-5-B-A-MR nach Preis ab 61.87 EUR bis 89.51 EUR
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GS-065-060-5-B-A-MR | Infineon Technologies |
GaN FETs Automotive 650V, 60A, GaN E-mode, GaNPX package, Bottom-side cooled |
auf Bestellung 555 Stücke: Lieferzeit 10-14 Tag (e) |
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| GS-065-060-5-B-A-MR |
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Hersteller: Infineon Technologies
GaN FETs Automotive 650V, 60A, GaN E-mode, GaNPX package, Bottom-side cooled
GaN FETs Automotive 650V, 60A, GaN E-mode, GaNPX package, Bottom-side cooled
auf Bestellung 555 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 89.51 EUR |
| 10+ | 79.78 EUR |
| 25+ | 75.02 EUR |
| 50+ | 73.52 EUR |
| 250+ | 62.75 EUR |
| 1000+ | 61.92 EUR |
| 2500+ | 61.87 EUR |