GS-065-060-5-B-A-MR GaN Systems

Description: GS-065-060-5-B-A-MR, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 16.4mA, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V, Qualification: AEC-Q101.