GS0650111LMRXUSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: GS-065-011-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
| Anzahl | Privatkunde |
|---|---|
| 250+ | 4.41 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
250 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details GS0650111LMRXUSA1 Infineon Technologies
Description: INFINEON - GS0650111LMRXUSA1 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.19 ohm, 2.2 nC, PDFN, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 650V, rohsCompliant: YES, Dauer-Drainstrom Id: 11A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Ladung, typ.: 2.2nC, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: PDFN, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Drain-Source-Durchgangswiderstand: 0.19ohm.
Weitere Produktangebote GS0650111LMRXUSA1 nach Preis ab 4.74 EUR bis 12.65 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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GS0650111LMRXUSA1 | INFINEON |
Description: INFINEON - GS0650111LMRXUSA1 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.19 ohm, 2.2 nC, PDFN, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR isCanonical: N hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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GS0650111LMRXUSA1 | Infineon Technologies |
Description: GS-065-011-1-L-MR Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V Vgs(th) (Max) @ Id: 2.6V @ 2.4mA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V |
auf Bestellung 354 Stücke: Lieferzeit 10-14 Tag (e) |
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GS0650111LMRXUSA1 | INFINEON |
Description: INFINEON - GS0650111LMRXUSA1 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.19 ohm, 2.2 nC, PDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 2.2nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: 0.19ohm |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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| GS0650111LMRXUSA1 |
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Hersteller: INFINEON
Description: INFINEON - GS0650111LMRXUSA1 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.19 ohm, 2.2 nC, PDFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - GS0650111LMRXUSA1 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.19 ohm, 2.2 nC, PDFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 4.74 EUR |
| GS0650111LMRXUSA1 |
|
Hersteller: Infineon Technologies
Description: GS-065-011-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
Description: GS-065-011-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
auf Bestellung 354 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.34 EUR |
| 10+ | 6.89 EUR |
| 50+ | 5.41 EUR |
| 100+ | 4.93 EUR |
| GS0650111LMRXUSA1 |
|
Hersteller: INFINEON
Description: INFINEON - GS0650111LMRXUSA1 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.19 ohm, 2.2 nC, PDFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 11A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 2.2nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PDFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.19ohm
Description: INFINEON - GS0650111LMRXUSA1 - Galliumnitrid (GaN)-Transistor, 650 V, 11 A, 0.19 ohm, 2.2 nC, PDFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 650V
rohsCompliant: YES
Dauer-Drainstrom Id: 11A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 2.2nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PDFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: 0.19ohm
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 12.65 EUR |
| 30+ | 7.82 EUR |