GS0650116LRMRXUSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: GS-065-011-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 3.22 EUR |
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Technische Details GS0650116LRMRXUSA1 Infineon Technologies
Description: GS-065-011-6-LR-MR, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 2.4mA, Supplier Device Package: 8-PDFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V.
Weitere Produktangebote GS0650116LRMRXUSA1 nach Preis ab 3.6 EUR bis 7.6 EUR
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GS0650116LRMRXUSA1 | Hersteller : Infineon Technologies |
Description: GS-065-011-6-LR-MR Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V Vgs(th) (Max) @ Id: 2.6V @ 2.4mA Supplier Device Package: 8-PDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V |
auf Bestellung 496 Stücke: Lieferzeit 10-14 Tag (e) |
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GS0650116LRMRXUSA1 | Hersteller : INFINEON |
Description: INFINEON - GS0650116LRMRXUSA1 - Galliumnitrid (GaN)-Transistor, 700 V, 12.2 A, 0.18 ohm, 2.2 nC, PDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 700V rohsCompliant: YES Dauer-Drainstrom Id: 12.2A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 2.2nC Bauform - Transistor: PDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.18ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |