GS0650116LRMRXUSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: GS-065-011-6-LR-MR
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details GS0650116LRMRXUSA1 Infineon Technologies
Description: GS-065-011-6-LR-MR, Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): +7V, -10V, Drive Voltage (Max Rds On, Min Rds On): 6V, Supplier Device Package: 8-PDFN (8x8), Vgs(th) (Max) @ Id: 2.6V @ 2.4mA, Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V, Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-VDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote GS0650116LRMRXUSA1 nach Preis ab 3.6 EUR bis 7.6 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GS0650116LRMRXUSA1 | Infineon Technologies |
Description: GS-065-011-6-LR-MR Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): +7V, -10V Drive Voltage (Max Rds On, Min Rds On): 6V Supplier Device Package: 8-PDFN (8x8) Vgs(th) (Max) @ Id: 2.6V @ 2.4mA Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 496 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
GS0650116LRMRXUSA1 | INFINEON |
Description: INFINEON - GS0650116LRMRXUSA1 - Galliumnitrid (GaN)-Transistor, 700 V, 12.2 A, 0.18 ohm, 2.2 nC, PDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 700V rohsCompliant: YES Dauer-Drainstrom Id: 12.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 2.2nC Bauform - Transistor: PDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.18ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||
|
|
GS0650116LRMRXUSA1 | INFINEON |
Description: INFINEON - GS0650116LRMRXUSA1 - Galliumnitrid (GaN)-Transistor, 700 V, 12.2 A, 0.18 ohm, 2.2 nC, PDFN, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR isCanonical: N hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GS0650116LRMRXUSA1 |
|
Hersteller: Infineon Technologies
Description: GS-065-011-6-LR-MR
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: GS-065-011-6-LR-MR
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 496 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.6 EUR |
| 10+ | 5.05 EUR |
| 100+ | 3.6 EUR |
| GS0650116LRMRXUSA1 |
|
Hersteller: INFINEON
Description: INFINEON - GS0650116LRMRXUSA1 - Galliumnitrid (GaN)-Transistor, 700 V, 12.2 A, 0.18 ohm, 2.2 nC, PDFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 700V
rohsCompliant: YES
Dauer-Drainstrom Id: 12.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 2.2nC
Bauform - Transistor: PDFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.18ohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - GS0650116LRMRXUSA1 - Galliumnitrid (GaN)-Transistor, 700 V, 12.2 A, 0.18 ohm, 2.2 nC, PDFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 700V
rohsCompliant: YES
Dauer-Drainstrom Id: 12.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 2.2nC
Bauform - Transistor: PDFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.18ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
| GS0650116LRMRXUSA1 |
|
Hersteller: INFINEON
Description: INFINEON - GS0650116LRMRXUSA1 - Galliumnitrid (GaN)-Transistor, 700 V, 12.2 A, 0.18 ohm, 2.2 nC, PDFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - GS0650116LRMRXUSA1 - Galliumnitrid (GaN)-Transistor, 700 V, 12.2 A, 0.18 ohm, 2.2 nC, PDFN, Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)