GS0650146LRMRXUSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: GS-065-014-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
| Anzahl | Privatkunde |
|---|---|
| 250+ | 4.59 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
250 Stücke
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Technische Details GS0650146LRMRXUSA1 Infineon Technologies
Description: INFINEON - GS0650146LRMRXUSA1 - Galliumnitrid (GaN)-Transistor, 700 V, 15.2 A, 0.138 ohm, 2.7 nC, PDFN, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 700V, rohsCompliant: YES, Dauer-Drainstrom Id: 15.2A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, usEccn: EAR99, euEccn: NLR, Gate-Ladung, typ.: 2.7nC, Bauform - Transistor: PDFN, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Drain-Source-Durchgangswiderstand: 0.138ohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote GS0650146LRMRXUSA1 nach Preis ab 5.12 EUR bis 13.99 EUR
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GS0650146LRMRXUSA1 | Infineon Technologies |
Description: GS-065-014-6-LR-MR Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc) Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V Vgs(th) (Max) @ Id: 2.6V @ 3mA Supplier Device Package: 8-PDFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V |
auf Bestellung 437 Stücke: Lieferzeit 10-14 Tag (e) |
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GS0650146LRMRXUSA1 | INFINEON |
Description: INFINEON - GS0650146LRMRXUSA1 - Galliumnitrid (GaN)-Transistor, 700 V, 15.2 A, 0.138 ohm, 2.7 nC, PDFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 700V rohsCompliant: YES Dauer-Drainstrom Id: 15.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 2.7nC Bauform - Transistor: PDFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.138ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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| GS0650146LRMRXUSA1 |
|
Hersteller: Infineon Technologies
Description: GS-065-014-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
Description: GS-065-014-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
auf Bestellung 437 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.61 EUR |
| 10+ | 7.1 EUR |
| 100+ | 5.12 EUR |
| GS0650146LRMRXUSA1 |
|
Hersteller: INFINEON
Description: INFINEON - GS0650146LRMRXUSA1 - Galliumnitrid (GaN)-Transistor, 700 V, 15.2 A, 0.138 ohm, 2.7 nC, PDFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 700V
rohsCompliant: YES
Dauer-Drainstrom Id: 15.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 2.7nC
Bauform - Transistor: PDFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.138ohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - GS0650146LRMRXUSA1 - Galliumnitrid (GaN)-Transistor, 700 V, 15.2 A, 0.138 ohm, 2.7 nC, PDFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 700V
rohsCompliant: YES
Dauer-Drainstrom Id: 15.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
euEccn: NLR
Gate-Ladung, typ.: 2.7nC
Bauform - Transistor: PDFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Drain-Source-Durchgangswiderstand: 0.138ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 13.99 EUR |
| 27+ | 8.7 EUR |
| 100+ | 5.78 EUR |