GS0650306LLMRXUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: GAN POWER TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 6.73 EUR |
| 500+ | 6.61 EUR |
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Technische Details GS0650306LLMRXUMA1 Infineon Technologies
Description: GAN POWER TRANSISTOR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 7.5mA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V.
Weitere Produktangebote GS0650306LLMRXUMA1 nach Preis ab 7.41 EUR bis 14.54 EUR
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GS0650306LLMRXUMA1 | Hersteller : Infineon Technologies |
Description: GAN POWER TRANSISTOR Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 6V Vgs(th) (Max) @ Id: 2.6V @ 7.5mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V |
auf Bestellung 968 Stücke: Lieferzeit 10-14 Tag (e) |
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GS0650306LLMRXUMA1 | Hersteller : INFINEON |
Description: INFINEON - GS0650306LLMRXUMA1 - Galliumnitrid (GaN)-Transistor, 700 V, 40 A, 0.058 ohm, 6.7 nC, TOLL, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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GS0650306LLMRXUMA1 | Hersteller : INFINEON |
Description: INFINEON - GS0650306LLMRXUMA1 - Galliumnitrid (GaN)-Transistor, 700 V, 40 A, 0.058 ohm, 6.7 nC, TOLL, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 700V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 6.7nC Bauform - Transistor: TOLL Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.058ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |