GS1J-AU_R1_000A1 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Leakage current: 50µA
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Leakage current: 50µA
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1750 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1035+ | 0.069 EUR |
1370+ | 0.052 EUR |
1745+ | 0.041 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GS1J-AU_R1_000A1 PanJit Semiconductor
Description: DIODE GEN PURP 600V 1A SMA, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 12pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SMA (DO-214AC), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote GS1J-AU_R1_000A1 nach Preis ab 0.041 EUR bis 0.069 EUR
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GS1J-AU_R1_000A1 | Hersteller : PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Leakage current: 50µA Kind of package: reel; tape Application: automotive industry |
auf Bestellung 1750 Stücke: Lieferzeit 14-21 Tag (e) |
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GS1J-AU_R1_000A1 | Hersteller : Panjit International Inc. |
Description: DIODE GEN PURP 600V 1A SMA Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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GS1J-AU_R1_000A1 | Hersteller : Panjit | Diodes - General Purpose, Power, Switching PJ/GS1J/TR/7"/HF/1.8K/SMA/GPP/SMD/GSM-10AH/GSM10-QI06/PJ/// |
Produkt ist nicht verfügbar |
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GS1J-AU-R1-000A1 | Hersteller : Panjit | Diodes - General Purpose, Power, Switching |
Produkt ist nicht verfügbar |