GS1J-AU_R1_000A1 PanJit Semiconductor
auf Bestellung 3585 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 336+ | 0.21 EUR |
| 1651+ | 0.04 EUR |
| 1743+ | 0.04 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GS1J-AU_R1_000A1 PanJit Semiconductor
Description: DIODE GEN PURP 600V 1A SMA, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 12pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SMA (DO-214AC), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Qualification: AEC-Q101.
Weitere Produktangebote GS1J-AU_R1_000A1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
GS1J-AU_R1_000A1 | Hersteller : Panjit International Inc. |
 Description: DIODE GEN PURP 600V 1A SMAPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|
 |
GS1J-AU_R1_000A1 | Hersteller : Panjit |
Diodes - General Purpose, Power, Switching PJ/GS1J/TR/7"/HF/1.8K/SMA/GPP/SMD/GSM-10AH/GSM10-QI06/PJ/// |
Produkt ist nicht verfügbar |
|
|
|
GS1J-AU-R1-000A1 | Hersteller : Panjit |
Diodes - General Purpose, Power, Switching |
Produkt ist nicht verfügbar |