GS61004B-MR Infineon Technologies
Hersteller: Infineon Technologies
Description: GS61004B-MR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V
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Technische Details GS61004B-MR Infineon Technologies
Description: GS61004B-MR, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 6V, Vgs(th) (Max) @ Id: 1.3V @ 7mA, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V.
Weitere Produktangebote GS61004B-MR nach Preis ab 4.19 EUR bis 10.2 EUR
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GS61004B-MR | Infineon Technologies |
 GaN FETs 100V, 38A, GaN E-mode, GaNPX package, Bottom-side cooled |
auf Bestellung 7384 Stücke: Lieferzeit 10-14 Tag (e) |
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GS61004B-MR | Infineon Technologies |
Description: GS61004B-MR Packaging: Cut Tape (CT) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 6V Vgs(th) (Max) @ Id: 1.3V @ 7mA Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V |
auf Bestellung 712 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GS61004B-MR |
|
Hersteller: Infineon Technologies
GaN FETs 100V, 38A, GaN E-mode, GaNPX package, Bottom-side cooled
GaN FETs 100V, 38A, GaN E-mode, GaNPX package, Bottom-side cooled
auf Bestellung 7384 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.63 EUR |
| 10+ | 7.27 EUR |
| 25+ | 6.85 EUR |
| 100+ | 6.14 EUR |
| 250+ | 5.19 EUR |
| 1000+ | 4.44 EUR |
| 2500+ | 4.19 EUR |
| GS61004B-MR |
Hersteller: Infineon Technologies
Description: GS61004B-MR
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V
Description: GS61004B-MR
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 50 V
auf Bestellung 712 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.2 EUR |
| 10+ | 6.81 EUR |
| 100+ | 5.65 EUR |