GS61008P-TR Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 14.12 EUR |
| 10+ | 10.49 EUR |
| 100+ | 8.75 EUR |
| 500+ | 7.8 EUR |
| 3000+ | 6.62 EUR |
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Technische Details GS61008P-TR Infineon Technologies
Description: GS61008P-TR, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): +7V, -10V, Drive Voltage (Max Rds On, Min Rds On): 6V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -55°C ~ 150°C, Mounting Type: Surface Mount, Package / Case: 5-SMD, No Lead, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 2.6V @ 7mA.
Weitere Produktangebote GS61008P-TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| GS61008P-TR | --- | MOSFET 100V, 90A, GaN E-mode Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
GS61008P-TR | Infineon Technologies Canada Inc. |
Description: GS61008P-TR Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): +7V, -10V Drive Voltage (Max Rds On, Min Rds On): 6V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 5-SMD, No Lead Packaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 2.6V @ 7mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GS61008P-TR |
Hersteller: ---
MOSFET 100V, 90A, GaN E-mode Транзистори
MOSFET 100V, 90A, GaN E-mode Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GS61008P-TR |
Hersteller: Infineon Technologies Canada Inc.
Description: GS61008P-TR
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 5-SMD, No Lead
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Description: GS61008P-TR
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 5-SMD, No Lead
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 2.6V @ 7mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH