GS61008P-TR Infineon Technologies
auf Bestellung 9713 Stücke:
Lieferzeit 178-182 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 14.31 EUR |
| 10+ | 12.25 EUR |
| 25+ | 11.12 EUR |
| 100+ | 10.21 EUR |
| 250+ | 9.61 EUR |
| 500+ | 9.01 EUR |
| 1000+ | 8.11 EUR |
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Technische Details GS61008P-TR Infineon Technologies
Description: GS61008P-TR, Packaging: Tape & Reel (TR), Package / Case: 5-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 7mA, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V.
Weitere Produktangebote GS61008P-TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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GS61008P-TR | Hersteller : GaN Systems |
 Bottom-side cooled 100 V E-mode GaN transistor |
Produkt ist nicht verfügbar |
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| GS61008P-TR | Hersteller : GaN Systems Inc | Trans MOSFET N-CH GaN 100V 90A 5-Pin ULGA T/R |
Produkt ist nicht verfügbar |
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GS61008P-TR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS61008P-TR Packaging: Tape & Reel (TR) Package / Case: 5-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V Vgs(th) (Max) @ Id: 2.6V @ 7mA Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V |
Produkt ist nicht verfügbar |