GS66502B-MR Infineon Technologies Canada Inc.
Hersteller: Infineon Technologies Canada Inc.
Description: GS66502B-MR
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.25A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.75mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 400 V
Description: GS66502B-MR
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.25A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.75mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 400 V
auf Bestellung 218 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 22.76 EUR |
| 10+ | 16.62 EUR |
| 100+ | 13.61 EUR |
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Technische Details GS66502B-MR Infineon Technologies Canada Inc.
Description: GS66502B-MR, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 2.25A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 1.75mA, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 400 V.
Weitere Produktangebote GS66502B-MR nach Preis ab 7.42 EUR bis 24.39 EUR
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GS66502B-MR | Hersteller : Infineon Technologies |
 GaN FETs 650V, 7.5A, GaN E-mode, GaNPX package, Bottom-side cooled |
auf Bestellung 8343 Stücke: Lieferzeit 10-14 Tag (e) |
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GS66502B-MR | Hersteller : GaN Systems |
Trans MOSFET N-CH GaN 650V 7.5A 3-Pin GaNPX T/R |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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| GS66502B-MR | Hersteller : GaN Systems Inc | Trans MOSFET N-CH GaN 650V 7.5A 3-Pin GaNPX T/R |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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| GS66502B-MR | Hersteller : GaN Systems Inc | Trans MOSFET N-CH GaN 650V 7.5A 3-Pin GaNPX T/R |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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| GS66502B-MR | Hersteller : GaN Systems Inc | Trans MOSFET N-CH GaN 650V 7.5A 3-Pin GaNPX T/R |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| GS66502B-MR | Hersteller : GaN Systems Inc | Trans MOSFET N-CH GaN 650V 7.5A 3-Pin GaNPX T/R |
Produkt ist nicht verfügbar |
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GS66502B-MR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS66502B-MR Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 2.25A, 6V Vgs(th) (Max) @ Id: 2.6V @ 1.75mA Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 400 V |
Produkt ist nicht verfügbar |