GS66502B-TR Infineon Technologies
Hersteller: Infineon TechnologiesGaN FETs 650V, 7.5A, GaN E-mode, GaNPX package, Bottom-side cooled
auf Bestellung 2296 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 24.41 EUR |
| 10+ | 21.51 EUR |
| 25+ | 20.93 EUR |
| 50+ | 19.78 EUR |
| 100+ | 18.60 EUR |
| 250+ | 18.02 EUR |
| 500+ | 16.86 EUR |
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Technische Details GS66502B-TR Infineon Technologies
Description: GS66502B-TR, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 2.25A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 1.75mA, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 400 V.
Weitere Produktangebote GS66502B-TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| GS66502B-TR | Hersteller : GaN Systems |
Trans MOSFET N-CH GaN 650V 7.5A T/R |
Produkt ist nicht verfügbar |
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GS66502B-TR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS66502B-TR Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 2.25A, 6V Vgs(th) (Max) @ Id: 2.6V @ 1.75mA Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 400 V |
Produkt ist nicht verfügbar |