GS66502B-TR Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 19.11 EUR |
| 10+ | 15.56 EUR |
| 100+ | 12.97 EUR |
| 500+ | 11.56 EUR |
| 1000+ | 11.09 EUR |
| 3000+ | 9.82 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details GS66502B-TR Infineon Technologies
Description: GS66502B-TR, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 2.25A, 6V, Vgs(th) (Max) @ Id: 2.6V @ 1.75mA, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 400 V.
Weitere Produktangebote GS66502B-TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
GS66502B-TR | Infineon Technologies Canada Inc. |
Description: GS66502B-TR Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 2.25A, 6V Vgs(th) (Max) @ Id: 2.6V @ 1.75mA Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 400 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| GS66502B-TR |
Hersteller: Infineon Technologies Canada Inc.
Description: GS66502B-TR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.25A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.75mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 400 V
Description: GS66502B-TR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 2.25A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 1.75mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH