GS66504B-MR Infineon Technologies Canada Inc.
Hersteller: Infineon Technologies Canada Inc.
Description: GS66504B-MR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.5A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 3.5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
Description: GS66504B-MR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 4.5A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 3.5mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 14.48 EUR |
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Technische Details GS66504B-MR Infineon Technologies Canada Inc.
Description: GS66504B-MR, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 4.5A, 6V, Vgs(th) (Max) @ Id: 1.3V @ 3.5mA, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -10V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V.
Weitere Produktangebote GS66504B-MR nach Preis ab 15.10 EUR bis 31.70 EUR
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GS66504B-MR | Hersteller : Infineon Technologies Canada Inc. |
Description: GS66504B-MR Packaging: Cut Tape (CT) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 4.5A, 6V Vgs(th) (Max) @ Id: 1.3V @ 3.5mA Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V |
auf Bestellung 368 Stücke: Lieferzeit 10-14 Tag (e) |
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GS66504B-MR | Hersteller : GaN Systems |
 GaN FETs 650V, 15A, GaN E-mode, GaNPX package, Bottom-side cooled |
auf Bestellung 6850 Stücke: Lieferzeit 10-14 Tag (e) |
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GS66504B-MR | Hersteller : Infineon Technologies |
GaN FETs 650V, 15A, GaN E-mode, GaNPX package, Bottom-side cooled |
auf Bestellung 5836 Stücke: Lieferzeit 10-14 Tag (e) |
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| GS66504B-MR | Hersteller : GaN Systems Inc | GAN POWER TRANSISTOR |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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| GS66504B-MR | Hersteller : GaN Systems Inc | GAN POWER TRANSISTOR |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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GS66504B-MR | Hersteller : GaN Systems |
Bottom Side Cooled 650 V E-mode GaN Transistor |
Produkt ist nicht verfügbar |